¸´µ©´óѧÑо¿ÍŶÓÏàÖú·¢Ã÷¾§Ô²¼¶¹è»ù¶þά»¥²¹µþ²ã¾§Ìå¹ÜÐû²¼Ê±¼ä£º2022-12-14 16:47À´Ô´£º¸´µ©´óѧ΢µç×ÓѧԺ ¹Å°å¼¯³Éµç·¼¼ÊõʹÓÃÆ½ÃæÕ¹¿ªµÄµç×ÓÐͺͿÕѨÐ;§Ìå¹ÜÐγɻ¥²¹½á¹¹£¬´Ó¶ø»ñµÃ¸ßÐÔÄÜÅÌËãÄÜÁ¦¡£ÆäÃܶȵÄÌá¸ßÖ÷Ҫͨ¹ýËõСµ¥Î»¾§Ìå¹ÜµÄ³ß´çÀ´ÊµÏÖ¡£ÀýÈç7nm½ÚµãÒÔÏÂÒµ½çʹÓü«×ÏÍâ¹â¿Ì¼¼ÊõʵÏָ߾«¶È³ß´ç΢Ëõ¡£¼«×ÏÍâ¹â¿ÌÉ豸ÅÓ´ó£¬ÔÚÏÖÓм¼Êõ½ÚµãÏÂÄܹ»´ó·ùÌáÉý¼¯³ÉÃܶȵÄÈýάµþ²ã»¥²¹¾§Ìå¹Ü(CFET) ¼¼Êõ¼Ûֵ͹ÏÔ¡£È»¶ø£¬È«¹è»ùCFETµÄ¹¤ÒÕÅÓÆ¯ºó¸ßÇÒÐÔÄÜÔÚÅÓ´ó¹¤ÒÕÇé¿öÏÂÍË»¯ÑÏÖØ¡£Òò´Ë£¬Ñз¢ÓëÎÒ¹úÖ÷Á÷¼¼Êõ¸ß¶È¼æÈݵÄCFETÆ÷¼þÓ뼯³É£¬¹ØÓÚ×ÔÖ÷Éú³¤ÐÂÐͼ¯³Éµç·¼¼Êõ¾ßÓÐÖØÒªÒâÒå¡£ Õë¶ÔÕâÒ»Òªº¦¼¼Êõ£¬¸´µ©´óѧ΢µç×ÓѧԺÖÜÅô½ÌÊÚ¡¢°üÎÄÖÐÑо¿Ô±¼°ÐÅÏ¢¿ÆÑ§Ó빤³ÌѧԺÍò¾°Ñо¿Ô±Á¢ÒìµØÌá³öÁ˹è»ù¶þάÒìÖʼ¯³Éµþ²ã¾§Ìå¹Ü¡£¸Ã¼¼ÊõÀûÓóÉÊìµÄºó¶Ë¹¤ÒÕ½«ÐÂÐͶþάÖÊÁϼ¯³ÉÔÚ¹è»ùоƬÉÏ£¬²¢ÀûÓÃÁ½Õß¸ß¶ÈÆ¥ÅäµÄÎïÀíÌØÐÔ£¬ÀÖ³ÉʵÏÖ4Ó¢´ç´ó¹æÄ£ÈýάÒìÖʼ¯³É»¥²¹³¡Ð§Ó¦¾§Ìå¹Ü¡£ÔÚÏàͬµÄ¹¤ÒÕ½ÚµãÏÂʵÏÖÁËÆ÷¼þ¼¯³ÉÃܶȷ±¶£¬²¢»ñµÃÁË׿ԽµÄµçѧÐÔÄÜ¡£±±¾©Ê±¼ä2022Äê12ÔÂ9ÈÕ£¬Ïà¹Ø½á¹ûÒÔ¡¶¹èºÍ¶þÁò»¯îâÒìÖÊ»¥²¹³¡Ð§Ó¦¾§Ìå¹Ü¡·£¨Heterogeneous Complementary Field-effect Transistors based on Silicon and Molybdenum Disulfide£©ÎªÌâÐû²¼ÓÚ¹ú¼Ê¶¥¼âÆÚ¿¯¡¶×ÔÈ»-µç×Óѧ¡·£¨Nature Electronics£©£¬ÎÄÕÂÁ´½Ó£ºhttps://www.nature.com/articles/s41928-022-00881-0¡£ ¸´µ©´óѧÑо¿ÍŶӽ«ÐÂÐͶþάÔ×Ó¾§ÌåÒýÈë¹Å°åµÄ¹è»ùÐ¾Æ¬ÖÆÔìÁ÷³Ì£¬ÊµÏÖÁ˾§Ô²¼¶ÒìÖÊCFET¼¼Êõ¡£Ïà±ÈÓÚ¹èÖÊÁÏ£¬¶þάÔ×Ó¾§ÌåµÄµ¥Ô×Ó²ãºñ¶ÈʹÆäÔÚС³ß´çÆ÷¼þÖоßÓÐÓÅÔ½µÄ¶Ì¹µµÀ¿ØÖÆÄÜÁ¦¡£
ͼ£º¹è»ù¶þάµþ²ã¾§Ìå¹ÜµÄ¿´·¨¡¢¾§Ô²¼¶ÖÆÔìÓëÆ÷¼þ½á¹¹ Ñо¿ÍŶÓÀûÓùè»ù¼¯³Éµç·µÄ±ê×¼ºó¶Ë¹¤ÒÕ£¬½«¶þÁò»¯îâ(MoS2)Èýά¶ÑµþÔڹŰåµÄ¹è»ùоƬÉÏ£¬ÐγÉpÐ͹è-nÐͶþÁò»¯îâµÄÒìÖÊ»¥²¹CFET½á¹¹¡£¶þÁò»¯îâµÄµÍι¤ÒÕÓëÄ¿½ñ¹è»ù¼¯³Éµç·µÄºó¶Ë¹¤ÒÕÁ÷³Ì¸ß¶È¼æÈÝ£¬´ó·ù½µµÍÁ˹¤ÒÕÄѶÈÇÒÖÆÖ¹ÁËÆ÷¼þµÄÍË»¯¡£Í¬Ê±£¬Á½ÖÖÖÊÁϵÄÔØÁ÷×ÓÇ¨ÒÆÂʽӽü£¬Æ÷¼þÐÔÄÜÍêÃÀÆ¥Å䣬ʹÒìÖÊCFETµÄÐÔÄÜÓÅÓڹŰå¹è»ù¼°ÆäËûÖÊÁÏ¡£ÀýÈçÆä·´ÏàÆ÷ÔöÒæÔÚ3V¹©µçʱ¸ß´ï142.3V/V£¬ÔÚ³¬µÍѹ¹©µç0.1VʱÆäÔöÒæ´ï1.2V/VÇÒ¹¦ºÄµÍÖÁ64pW¡£ÍŶӻ¹ÑéÖ¤Á˸ÃÐÂÐÍÆ÷¼þÔÚ ¡°È«ÔÚÒ»¡±¹âµç̽²â¼°ÆøÌå´«¸ÐÖеÄÓ¦ÓᣠĿǰ£¬»ùÓÚ¹¤Òµ»¯²úÏߵĸü´ó³ß´ç¾§Ô²¼¶ÒìÖÊCFET¼¼ÊõÕýÔÚÑз¢ÖС£¸Ã¼¼Êõ½«½øÒ»²½ÌáÉýоƬµÄ¼¯³ÉÃܶȣ¬Âú×ã¸ßËãÁ¦´¦ÀíÆ÷£¬¸ßÃܶȴ洢Æ÷¼°È˹¤ÖÇÄܵÈÓ¦ÓõÄÉú³¤ÐèÇó£¬ÖúÁ¦Í»ÆÆÍâÑóÔÚ´ó¹æÄ£¼¯³Éµç·ÁìÓòµÄ¼¼Êõ·â±Õ¡£ Ïà¹ØÊÂÇé»ñµÃÁ˿Ƽ¼²¿ÖصãÑз¢¼Æ»®¡¢¹ú¼Ò×ÔÈ»»ù½ðί½Ü³öÇàÄê»ù½ð¡¢ÉϺ£ÊÐ̽Ë÷Õ߼ƻ®µÈÏîÄ¿µÄ×ÊÖú£¬ÒÔ¼°½ÌÓý²¿Á¢ÒìÆ½Ì¨µÄÖ§³Ö¡£ |